Y E a R S O F E X C E L L E N C E

The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP (001) substrates are reported. Pulsed room-temperature operation demonstrates wavelengths from 1.60 to 1.66 μm for one-, three-, and five-stack designs, a threshold current density as low as 410 A/cm2 for single-stack uncoated lasers, and a distinctly quantum-wire-like dependence of the threshold current on the laser cavity orientation. The maximal modal gains for lasing in the ground-state with the cavity perpendicular to the dash direction are determined to be 15 cm-1 for single-stack and 22 cm-1 for five-stack lasers. The authors are with the Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106 USA (e-mail: [email protected]). © 2001 IEEE. Reprinted, with permission, from IEEE Photonics Technology Letters. IEEE PHOTONICS TECHNOLOGY LETTERS. VOL.13, NO.8, AUGUST 2001 767 Reconfigurable quantum dot monolithic multisection passive mode-locked lasers Y.-C. Xin, Y. Li, Vassilios Kovanis, A. L. Gray, L. Zhang and L. F. Lester University of New Mexico, Center for High Technology Materials, 1313 Goddard SE, Albuquerque, NM 87106, USA AFRL/SNDP 2241 Avionics Circle, Wright Patterson AFB Ohio 45433-7320 USA Zia Laser, Inc. 801 University Blvd., Albuquerque, NM 87106 USA [email protected] Abstract: We investigate the dynamical response of a quantum dot photonic integrated circuit formed with a combination of eleven passive and active gain cells operating when these cells are appropriately biased as a multi-section quantum dot passively mode-locked laser. When the absorber section is judiciously positioned in the laser cavity then fundamental frequency and harmonic mode-locking at repetition rates from 7.2GHz to 51GHz are recorded. These carefully engineered multi-section configurations that include a passive wave-guide section significantly lower the pulse width up to 34% from 9.7 to 6.4 picoseconds, as well increase by 49% the peak pulsed power from 150 to 224 mW, in comparison to conventional two-section configurations that are formed on the identical device under the same average power. In addition an ultra broad operation range with pulse width below ten picoseconds is obtained with the 3harmonic mode-locking configuration. A record peak power of 234 mW for quantum dot mode-locked lasers operating over 40 GHz is reported for the first time. We investigate the dynamical response of a quantum dot photonic integrated circuit formed with a combination of eleven passive and active gain cells operating when these cells are appropriately biased as a multi-section quantum dot passively mode-locked laser. When the absorber section is judiciously positioned in the laser cavity then fundamental frequency and harmonic mode-locking at repetition rates from 7.2GHz to 51GHz are recorded. These carefully engineered multi-section configurations that include a passive wave-guide section significantly lower the pulse width up to 34% from 9.7 to 6.4 picoseconds, as well increase by 49% the peak pulsed power from 150 to 224 mW, in comparison to conventional two-section configurations that are formed on the identical device under the same average power. In addition an ultra broad operation range with pulse width below ten picoseconds is obtained with the 3harmonic mode-locking configuration. A record peak power of 234 mW for quantum dot mode-locked lasers operating over 40 GHz is reported for the first time. ©2007 Optical Society of America